STT2605 Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – P-Channel Enhancement Mode Power Mos.FET

STT2605
Elektronische Bauelemente
-4.0A, -30V,RDS(ON) 80m
P-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
Description
The STT2605 utiltzed advance processing techniques to achieve the lowest
possible on-resistance, extermely efficient and cost-effectiveness device.
The STT2605 is universally used for all commercial-industrial applications.
Features
* Fast Switching Characteristic
* Lower Gate Charge
* Small Footprint & Low Profile Package
D
G
Date Code
D
D
S
6
5
4
2605
S
1
2
3
D
D
G
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, (Note 3)
Continuous Drain Current, (Note 3)
Pulsed Drain Current (Note 1)
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID@TA=25к
ID@TA=70к
IDM
PD@TA=25к
Tj, Tstg
REF.
A
A1
A2
c
D
E
E1
Millimeter
Min. Max.
1.10 MAX.
0 0.10
0.70 1.00
0.12 REF.
2.70 3.10
2.60 3.00
1.40 1.80
REF.
L
L1
b
e
e1
Millimeter
Min. Max.
0.45 REF.
0.60 REF.
0°
10°
0.30 0.50
0.95 REF.
1.90 REF.
Ratings
-30
±20
-4.0
-3.3
-20
2.0
0.016
-55~+150
Unit
V
V
A
A
A
W
W /eC
eC
Thermal Data
Parameter
Thermal Resistance Junction-ambient (Note 3)
Symbol
Rthj-a
Ratings
62.5
Unit
eC /W
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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