STT2602 Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode Power Mos.FET

Elektronische Bauelemente
STT2602
6.3A, 20V,RDS(ON) 34m
N-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
Description
The STT2602 utiltzed advance processing techniques to achieve the lowest
possible on-resistance, extermely efficient and cost-effectiveness device.
The STT2602 is universally used for all commercial-industrial applications.
Features
* Low On-Resistance
* Capable of 2.5V Gate Drive
D
G
S
Date Code
D
D
S
6
5
4
2602
1
2
3
D
D
G
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
3
Continuous Drain Current,VGS@4.5V
3
Continuous Drain Current,VGS@4.5V
Pulsed Drain Current^1,2
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
REF.
A
A1
A2
c
D
E
E1
Millimeter
Min. Max.
1.10 MAX.
0 0.10
0.70 1.00
0.12 REF.
2.70 3.10
2.60 3.00
1.40 1.80
REF.
L
L1
b
e
e1
Millimeter
Min. Max.
0.45 REF.
0.60 REF.
0°
10°
0.30 0.50
0.95 REF.
1.90 REF.
Symbol
VDS
VGS
ID@TC=25^oC
ID@TC=70^oC
IDM
PD@TC=25^oC
Tj, Tstg
Ratings
20
± 12
6.3
5
30
2
0.016
-55~+150
Unit
V
V
A
A
A
W
W / ^oC
o_C
Thermal Data
Parameter
Thermal Resistance Junction-case³
Max.
Symbol
Rthj-c
Ratings
62.5
Unit
o_{C /W}
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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