STB1277 Datasheet, PDF (1/1 Pages) AUK corp – PNP Silicon Transistor

Elektronische Bauelemente
STB1277
-2A , -30V
PNP Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
General Purpose Switching and Amplification.
High Total Power Dissipation.
High h_FE and Good Linearity
TO-92
CLASSIFICATION OF h_FE
Product-Rank
STB1277-O
Range
100~200
STB1277-Y
160~320
3
Base
Collector
2
1Emitter
2Collector
3Base
1
Emitter
REF.
A
B
C
D
E
Millimeter
Min. Max.
4.40 4.70
4.30 4.70
12.70
-
3.30 3.81
0.36 0.56
REF.
F
G
H
J
K
Millimeter
Min. Max.
0.30 0.51
1.27 TYP.
1.10 1.40
2.42 2.66
0.36 0.76
ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage
VCBO
-30
Collector to Emitter Voltage
VCEO
-30
Emitter to Base Voltage
VEBO
-5
Collector Current - Continuous
IC
-2
Collector Power Dissipation
PC
0.625
Junction, Storage Temperature
TJ, TSTG
150, -55~150
Unit
V
V
V
A
W
°C
ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise specified)
Parameter
Symbol Min Typ Max Unit
Test condition
Collector to Base Breakdown Voltage
V(BR)CBO
-30
-
-
V IC= -0.1mA, IE=0
Collector to Emitter Breakdown Voltage V(BR)CEO
-30
-
-
V IC= -1mA, IB=0
Emitter to Base Breakdown Voltage
V(BR)EBO
-5
-
-
V IE= -1mA, IC=0
Collector Cut-Off Current
ICBO
-
-
-0.1
µA VCB= -30V, IE=0
Emitter Cut-Off Current
IEBO
-
-
-0.1
µA VEB= -5V, IC=0
DC Current Gain
hFE
100
-
320
VCE= -2V, IC= -500mA
Collector to Emitter Saturation Voltage VCE(sat)
-
-
-0.8
V IC= -2A, IB= -0.2A
Base to Emitter Saturation Voltage
VBE(sat)
-
-
-1
V IC= -500mA, VCE= -2V
Transition Frequency
fT
-
170
-
MHz VCE= -5V, IC= -50mA
Collector Output Capacitance
Cob
-
48
-
pF VCB= -10V, IE=0, f=1MHz
http://www.SeCoSGmbH.com/
08-May-2013 Rev. A
Any changes of specification will not be informed individually.
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