SSU90N04-02B Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente
SSU90N04-02B
N-Ch Enhancement Mode Power MOSFET
162A, 40V, R_DS(ON) 2.3mΩ
RoHS Compliant Product
A suffix of “-C” specifies halogen free
DESCRIPTION
These miniature surface mount MOSFETs utilize a high
cell density trench process to provide Low R_DS(on) and to
ensure minimal power loss and heat dissipation.
Typical applications are DC-DC converters and power
management in portable and battery-powered products
such as computers, printers, PCMCIA cards, cellular
and cordless telephones.
FEATURES
Low R_DS(on) provides higher efficiency and extends battery life.
Low thermal impedance copper leadframe DPAK saves board space.
Fast switching speed.
High performance trench technology.
PACKAGE INFORMATION
Package
MPQ
TO-263
0.8K
Leader Size
13 inch
1
Gate
2
Drain
3
Source
TO-263
2
1
REF.
A
b
L4
C
L3
L1
E
Millimeter
Min. Max.
4.00 4.85
0.68 1.00
0.00 0.30
0.36 0.53
1.50 REF
2.29 2.79
9.60 10.45
REF.
c2
b2
D
e
L
L2
Millimeter
Min. Max.
1.10 1.45
1.34 REF
8.0 9.15
2.54 REF
14.6 15.85
1.27 REF
ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)
Parameter
Symbol
Rating
Drain-Source Voltage
VDS
40
Gate-Source Voltage
VGS
±20
Continuous Drain Current ¹
TC=25°C
ID
162
Pulsed Drain Current ²
IDM
360
Unit
V
V
A
A
Continuous Source Current (Diode
Conduction) ¹
TC=25°C
IS
90
A
Total Power Dissipation
TC=25°C
PD
234
W
Operating Junction and Storage Temperature Range
TJ, TSTG
-55~175
°C
Thermal Resistance Rating
Maximum Thermal Resistance Junction-Ambient ³
RθJA
43
°C / W
Maximum Thermal Resistance Junction-Case
RθJC
0.64
°C / W
Note:
1. Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A
2. Pulse width limited by maximum junction temperature
3. Surface Mounted on 1” x 1” FR4 Board.
http://www.SeCoSGmbH.com/
13-Dec-2013 Rev.A
Any changes of specification will not be informed individually.
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