SSU50N10_15 Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente
SSU50N10
54A , 100V , R_DS(ON) 22mΩ
N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen free
DESCRIPTION
The SSU50N10 is the highest performance trench
N-ch MOSFETs with extreme high cell density , which provide
excellent R_DS(ON) and gate charge for most of the synchronous
buck converter applications .
FEATURES
Advanced high cell density Trench technology
Super Low Gate Charge
Excellent CdV/dt effect decline
100% EAS and 100% Rg Guaranteed
Green Device Available
TO-263
MARKING
50N10
Date Code
PACKAGE INFORMATION
Package
MPQ
TO-263
0.8K
Leader Size
13 inch
1
Gate
2
Drain
3
Source
REF.
A
b
L4
c
L3
L1
E
Millimeter
Min. Max.
4.40 4.80
0.76 1.00
0.00 0.30
0.36 0.5
1.50 REF
2.29 2.79
9.80 10.4
REF.
c2
b2
D
e
L
θ
L2
Millimeter
Min. Max.
1.17 1.45
1.1
1.47
8.5
9.0
2.54 REF
14.6 15.8
0°
8°
1.27 REF
ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)
Parameter
Symbol
Rating
Drain-Source Voltage
VDS
100
Gate-Source Voltage
VGS
±20
Continuous Drain Current ¹
VGS=10V, TC=25°C
ID
54
VGS=10V, TC=100°C
38
Pulsed Drain Current ²
IDM
160
Total Power Dissipation ⁴
TC=25°C
PD
TA=25°C
Single Pulse Avalanche Energy ³
EAS
104
3.13
98
Single Pulse Avalanche Current
IAS
41
Operating Junction and Storage Temperature Range
TJ, TSTG
-55~150
Thermal Resistance Rating
Maximum Thermal Resistance Junction-Ambient (PCB
mount) ¹
RθJA
40
Maximum Thermal Resistance Junction-Case ¹
RθJC
1.2
Unit
V
V
A
A
A
W
mJ
A
°C
°C / W
°C / W
http://www.SeCoSGmbH.com/
9-Dec-2011 Rev. A
Any changes of specification will not be informed individually.
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