SSU07N65SL_15 Datasheet, PDF (1/5 Pages) SeCoS Halbleitertechnologie GmbH – N-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente
SSU07N65SL
7A , 650V , R_DS(ON) 1.4Ω
N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen free
DESCRIPTION
The SSU07N65SL is the highest performance trench
N-ch MOSFETs with extreme high cell density , which provide
excellent R_DS(on) and gate charge for most of the synchronous
buck converter applications .
TO-263
FEATURES
Advanced high cell density Trench technology
Super Low Gate Charge
Excellent CdV/dt effect decline
100% EAS Guaranteed
Green Device Available
1
Gate
2
Drain
3
Source
REF.
A
b
L4
C
L3
L1
E
Millimeter
Min. Max.
4.00 4.85
0.51 1.00
0.00 0.30
0.30 0.74
1.50 REF
1.78 2.79
9.60 10.67
REF.
c2
b2
D
e
L
L2
Millimeter
Min. Max.
1.10 1.65
1.34 REF
8.0 9.65
2.54 REF
14.6 15.88
1.27 REF
ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)
Parameter
Symbol
Rating
Drain-Source Voltage
VDS
650
Gate-Source Voltage
VGS
±30
TC=25°C
7
Continuous Drain Current
ID
TC=100°C
4
Pulsed Drain Current
IDM
28
Total Power Dissipation
TC=25°C
PD
Derate above 25°C
Single Pulse Avalanche Energy ¹
EAS
140
1.12
435
Operating Junction and Storage Temperature Range
TJ, TSTG
-55~150
Thermal Resistance Rating
Maximum Thermal Resistance Junction-Ambient
RθJA
0.89
Maximum Thermal Resistance Junction-Case
Notes:
1. L=30mH,IAS=5A, VDD=100V, RG=25Ω, Starting TJ =25°C
RθJC
62.5
Unit
V
V
A
A
A
W
mJ
°C
°C / W
°C / W
http://www.SeCoSGmbH.com/
08-Oct-2013 Rev. A
Any changes of specification will not be informed individually.
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