SSU04N65_15 Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente
SSU04N65
4A , 650V , R_DS(ON) 2.6Ω
N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen free
DESCRIPTION
The SSU04N65 is the highest performance trench
N-ch MOSFETs with extreme high cell density , which provide
excellent R_DS(on) and gate charge for most of the synchronous
buck converter applications .
FEATURES
 Advanced high cell density Trench technology
 Super Low Gate Charge
 Excellent CdV/dt effect decline
 100% EAS Guaranteed
 Green Device Available
MARKING
4N65
 Date Code
PACKAGE INFORMATION
Package
MPQ
TO-263
0.8K

Gate
Leader Size
13 inch
TO-263
 _


Drain

Source
REF.
A
b
L4
C
L3
L1
E
Millimeter
Min. Max.
4.00 4.85
0.68 1.00
0.00 0.30
0.36 0.53
1.50 REF
2.29 2.79
9.60 10.45
REF.
c2
b2
D
e
L
L2
Millimeter
Min. Max.
1.10 1.45
1.34 REF
8.0
9.15
2.54 REF
14.6 15.85
1.27 REF
ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)
Parameter
Symbol
Rating
Drain-Source Voltage
V_DS
650
Gate-Source Voltage
V_GS
±30
Continuous Drain Current @V_GS=10V ^{1 TC=25°C}
I_D
4
T_C=100°C
2.6
Pulsed Drain Current ²
I_DM
8
Total Power Dissipation ⁴
T_C=25°C
P_D
T_A=25°C
Single Pulse Avalanche Energy ³
E_AS
112
2
2.36
Single Pulse Avalanche Current
I_AS
2
Operating Junction and Storage Temperature Range
T_J, T_STG
-55~150
Thermal Resistance Rating
Maximum Thermal Resistance Junction-Ambient (PCB
mount)¹
R_θJA
Maximum Thermal Resistance Junction-Case ¹
R_θJC
62
1.12
Unit
V
V
A
A
A
W
mJ
A
°C
°C / W
°C / W
http://www.SeCoSGmbH.com/
17-Jun-2013 Rev. B
Any changes of specification will not be informed individually.
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