SST8810J Datasheet, PDF (1/3 Pages) SeCoS Halbleitertechnologie GmbH – N-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente
SST8810J
7A, 20V, R_DS(ON) 20 mΩ
N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
SST8810J uses advanced trench technology to provide excellent
R_DS(ON) and low gate charge. It is protected by ESD. This device is
suitable for the use as a uni-directional or bi-directional load switch,
facilitated by its common-drain configuration.
SOT-26
A
E
L
MARKING
L8810
121
B
F
C
H
DG
K
J
PACKAGE INFORMATION
Package
MPQ
SOT-26
3K
Leader Size
7 inch
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.60 3.00
1.40 1.80
1.30 MAX.
1.90 REF.
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0
0.10
0.60 REF.
0.12 REF.
0°
10°
0.95 REF.
S1
D1/D2
S2
G1
D1/D2
G2
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
ID
Pulsed Drain Current ¹
IDM
Thermal Resistance from Junction to Ambient
RθJA
Lead Temperature for Soldering Purposes@1/8’’ from
case for 10s
TL
Junction and Storage Temperature Range
TJ, TSTG
Notes:
1. Repetitive rating: Pulse width is limited by the junction temperature.
Rating
20
±12
7
30
83.3
260
150, -55~150
Unit
V
V
A
A
°C / W
°C
°C
http://www.SeCoSGmbH.com/
26-Oct-2015 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 3