SST8205J Datasheet, PDF (1/3 Pages) SeCoS Halbleitertechnologie GmbH – N-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente
SST8205J
6A, 19V, R_DS(ON) 25 mΩ
N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
SST8205J provides the designers with the best combination
of fast switching, low on-resistance and cost-effectiveness.
SOT-26 package is universally used for all commercial-
industrial surface mount applications.
SOT-26
A
E
L
FEATURES
TrenchFET power MOSFET
Excellent R_DS(ON)
Low gate charge
B
F
C
H
DG
K
J
MARKING
L8205
141
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.60 3.00
1.40 1.80
1.30 MAX.
1.90 REF.
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0
0.10
0.60 REF.
0.12 REF.
0°
10°
0.95 REF.
PACKAGE INFORMATION
Package
MPQ
SOT-26
3K
Leader Size
7 inch
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current ¹
Thermal Resistance from Junction to Ambient ²
Lead Temperature for Soldering Purposes@1/8’’ from case
for 10s
Junction and Storage Temperature Range
VDS
VGS
ID
IDM
RθJA
TL
TJ, TSTG
Rating
19
±10
6
25
357
260
150, -55~150
Unit
V
V
A
A
°C / W
°C
°C
http://www.SeCoSGmbH.com/
22-Oct-2015 Rev. A
Any changes of specification will not be informed individually.
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