SST3585_10 Datasheet, PDF (1/7 Pages) SeCoS Halbleitertechnologie GmbH – N And P-Channel Enhancement Mode Power Mos.FET

Elektronische Bauelemente
SST3585
3.5 A, 20V ,RDS(ON)75mΩ
-2.5 A, -20V ,RDS(ON)160mΩ
N And P-Channel Enhancement Mode Power Mos.FET
Description
The SST3585 provide the designer with best combination of fast
switching,low on-resistance and cost effectiveness.
The SOT-26 package is universally used for all commercial-industrial
surface mount applications.
Features
* RoHS Compliant
* Low Gate Charge
* Low On-resistance
D1
S1
D2
6
5
4
Date Code
3585
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³
Continuous Drain Current ³
Pulsed Drain Current ¹
T otal Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
1
2
3
G1
S2
G2
Symbol
VDS
VGS
ID@TA=25 ^oC
ID@TA=70 ^oC
IDM
PD@TA=25
Tj, Tstg
SOT-26
1.90REF
0.95REF 0.95REF
0.45 REF
2.60
3.00
1.2 REF
0.60 REF
1.40
1.80
0.30
0.55
2.70
0.10 Max
3.10
o
0.7
0
1.45
o
10
Dimensions in millimeters
D1
D2
G2
G1
S1
S2
Ratings
20
-20
±12
±12
3.5
-2.5
2.8
-1.97
10
-10
1.14
0.01
-55~+150
Unit
V
V
A
A
A
W
W / ^oC
o_C
Thermal Data
Parameter
Thermal Resistance Junction-ambient³
Max.
Symbo
Rthj-a
Ratings
110
Unit
o_{C /W}
http://www.SeCoSGmbH.com/
15-Jun-2010 Rev. C
Any changing of specification will not be informed individual
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