SST3585 Datasheet, PDF (1/7 Pages) SeCoS Halbleitertechnologie GmbH – N And P-Channel Enhancement Mode Power Mos.FET

Elektronische Bauelemente
SST3585
3.5 A, 20V ,RDS(ON)75m
-2.5 A, -20V ,RDS(ON)160m
N And P-Channel Enhancement Mode Power Mos.FET
Description
SOT-26
The SST3585 provide the designer with best combination of fast
switching,low on-resistance and cost effectiveness.
The SOT-26 package is universally used for all commercial-industrial
surface mount applications.
0.30
0.55
Features
* RoHS Compliant
* Low Gate Charge
* Low On-resistance
D1
S1
D2
6
5
4
Date Code
3585
1
2
3
G1
S2
G2
0.95 Ref.
0.37Ref.
2.60
3.00
0.25
0.20
0.60 Ref.
1.40
1.80
2.70
0~0.1
3.10
1.20Ref.
o
0
o
10
Dimensions in millimeters
D1
D2
G2
G1
S1
S2
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³
Continuous Drain Current ³
Pulsed Drain Current ¹
T otal Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID@TA=25 ^oC
ID@TA=70 ^oC
IDM
PD@TA=25
Tj, Tstg
Ratings
20
-20
±12
±12
3.5
-2.5
2.8
-1.97
10
-10
1.14
0.01
-55~+150
Unit
V
V
A
A
A
W
W / ^oC
o_C
Thermal Data
Parameter
Thermal Resistance Junction-ambient³
Max.
Symbo
Rthj-a
Ratings
110
Unit
o_{C /W}
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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