SST3415J Datasheet, PDF (1/3 Pages) SeCoS Halbleitertechnologie GmbH – P-Channel Enhancement Mode MOSFET

Elektronische Bauelemente
SST3415J
-4A , -20V , R_DS(ON) 50 mΩ
P-Channel Enhancement Mode MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
SST3415J utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device. The SOT-26
package is universally used for all commercial-industrial
applications.
FEATURES
Simple Drive Requirement
Smaller Outline Package
Surface mount package
SOT-26
A
E
L
B
F
C
H
DG
K
J
MARKING
R15
PACKAGE INFORMATION
Package
MPQ
SOT-26
3K
Leader Size
7 inch
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.60 3.00
1.40 1.80
1.30 MAX.
1.90 REF.
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0
0.10
0.60 REF.
0.12 REF.
0°
10°
0.95 REF.
ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (t≦10s)
ID
Pulsed Drain Current ¹
IDM
Power Dissipation (t≦10s)
PD
Maximum Junction to Ambient
RθJA
Operating Junction and Storage Temperature Range
TJ, TSTG
Rating
-20
±8
-4
-30
0.35
357
150, -55~150
Unit
V
V
A
A
W
°C / W
°C
http://www.SeCoSGmbH.com/
15-Dec-2015 Rev. A
Any changes of specification will not be informed individually.
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