SST3215B Datasheet, PDF (1/5 Pages) SeCoS Halbleitertechnologie GmbH – N-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente
SST3215B
2.2A, 150V, R_{DS(O )} 320mΩ
-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
SST3215B provides designers with the best combination
of fast switching, low on-resistance and cost-effectiveness.
SOT-26 package is universally used for all commercial-
industrial surface mount applications.
FEATURES
150V/2.2A
R_DS(ON)≦320mΩ@ V_GS=10V
R_DS(ON)≦380mΩ@ V_GS=4.5V
Reliable and rugged
Green device available
SOT-26
A
E
L
B
F
C
H
DG
K
J
MARKING
3215B
= Date Code
PACKAGE INFORMATION
Package
MPQ
SOT-26
3K
Leader Size
7 inch
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.60 3.00
1.40 1.80
1.30 MAX.
1.90 REF.
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0
0.10
0.60 REF.
0.12 REF.
0°
10°
0.95 REF.
D
D
D
D
G
S
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain Current, VGS=10V ¹
TC=75°C
ID
TA=25°C
Pulsed Drain Current ²
TA=75°C
IDM
Power Dissipation
TC =25°C
PD
TA=25°C
Operating Junction and Storage Temperature Range
TJ, TSTG
Thermal Resistance Rating
t≦5sec
Thermal Resistance Junction to Ambient ¹
Steady State
RθJA
Thermal Resistance Junction to Ambient
Thermal Resistance Junction to Case ¹
RθJC
http://www.SeCoSGmbH.com/
15-Jul-2016 Rev. A
Rating
150
±20
2.2
1.8
1.7
1.4
8
3.2
2
-55~150
62.5
125
156
39
Unit
V
V
A
A
W
°C
°C / W
Any changes of specification will not be informed individually.
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