SST2630 Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente
SST2630
3.8A, 100V, R_DS(ON) 110 mΩ
N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
SST2630 provides designers with the best combination
of fast switching, low on-resistance and cost-effectiveness.
SOT-26 package is universally used for all commercial-
industrial surface mount applications.
SOT-26
A
E
L
FEATURES
Low on-resistance
Capable of 2.5V gate drive
Low drive current
MARKING
2630
= Date Code
PACKAGE INFORMATION
Package
MPQ
SOT-26
3K
Leader Size
7 inch
B
F
C
H
DG
K
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.60 3.00
1.40 1.80
1.30 MAX.
1.90 REF.
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0
0.10
0.60 REF.
0.12 REF.
0°
10°
0.95 REF.
D
D
D
D
G
S
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current, VGS=10V ¹
Pulsed Drain Current ³
TA=25°C
ID
TA=70°C
IDM
Power Dissipation
TA=25°C
PD
Linear Derating Factor
Operating Junction and Storage Temperature Range
TJ, TSTG
Thermal Resistance Rating
Maximum Thermal Resistance from Junction to Ambient ¹
R_θJA
Rating
100
±20
3.8
3
14
2
0.016
-55~150
62.5
Unit
V
V
A
A
W
W / °C
°C
°C / W
http://www.SeCoSGmbH.com/
17-Jun-2016 Rev. B
Any changes of specification will not be informed individually.
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