SST2625 Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – P-Channel Enhancement Mode Power Mos.FET

SST2625
Elektronische Bauelemente
-2.3A, -30V,RDS(ON) 135m
P-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
Description
The SST2625 utiltzed advance processing techniques to achieve the lowest
possible on-resistance, extermely efficient and cost-effectiveness device.
The SST2625 is universally used for all commercial-industrial applications.
0.30
0.55
Features
* Low On-Resistance
* Low Gate Charge
D1
D2
SOT-26
0.95 Ref.
0.37Ref.
2.60
3.00
0.25
0.20
0.60 Ref.
1.40
1.80
2.70
0~0.1
3.10
1.20Ref.
o
0
o
10
Dimensions in millimeters
D1
S1 D2
6
5
4
G1
G2
Date Code
2625
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³
Continuous Drain Current³
Pulsed Drain Current ¹
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
S1
S2
Symbol
VDS
VGS
ID@TA=25^oC
ID@TA=70^oC
IDM
PD@TA=25^oC
Tj, Tstg
1
2
3
G1
S2
G2
Ratings
-30
±12
-2.3
-2.0
-20
1.2
0.01
-55~+150
Unit
V
V
A
A
A
W
W /^oC
o_C
Thermal Data
Parameter
Thermal Resistance Junction-ambient³ (Max)
Symbol
Rthj-a
Ratings
110
Unit
o_{C /W}
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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