SST2611B Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – P-Channel Enhancement Mode MOSFET

Elektronische Bauelemente
SST2611B
-2.4A , -60V , R_DS(ON) 175 mΩ
P-Channel Enhancement Mode MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
SST2611B utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device. The SOT-26
package is universally used for all commercial-industrial
applications.
FEATURES
Simple Drive Requirement
Smaller Outline Package
Surface mount package
MARKING
2611B
Date Code
PACKAGE INFORMATION
Package
MPQ
SOT-26
3K
Leader Size
7 inch
SOT-26
D
H
AC
E
L
B
J
K
F
G
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.60 3.00
1.20 REF.
1.40 1.80
0.95 REF.
0.60 REF.
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.37 REF.
0.30 0.55
-
-
0.12 REF.
-
0.10
TOP VIEW
ABSOLUTE MAXIMUM RATINGS (T_J=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current @ VGS=10V ¹
TA=25°C
ID
TA=70°C
Pulsed Drain Current ²
IDM
Power Dissipation ³
TA=25°C
PD
Linear Derating Factor
Operating Junction and Storage Temperature Range
Tj, Tstg
Thermal Resistance Rating
Maximum Junction to Ambient ¹
R_θJA
Ratings
-60
±20
-2.4
-1.7
-4.5
1.1
0.009
-55~150
110
Unit
V
V
A
A
W
W / °C
°C
°C / W
http://www.SeCoSGmbH.com/
16-Mar-2015 Rev. A
Any changes of specification will not be informed individually.
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