SST2610 Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode Power Mos.FET

Elektronische Bauelemente
SST2610
3 A, 60 V, RDS(ON) 90 mΩ
N-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
z The SST2610 uses advanced processing techniques to achieve the lowest possible on-resistance,
extremely efficient and cost-effectiveness device.
z It is universally used for all commercial-industrial applications.
APPLICATIONS
z Low on-resistance
z Capable of 2.5V gate drive
PACKAGE INFORMATION
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.60 3.00
1.40 1.80
0.30 0.55
0
0.10
0
10
REF.
G
H
I
J
K
L
Millimeter
Min. Max.
1.90 REF.
1.20 REF.
0.12 REF.
0.37 REF.
0.60 REF.
0.95 REF.
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³
Continuous Drain Current³
Pulsed Drain Current ^1,2
V_GS@4.5V, T_A=25℃
V_GS@4.5V, T_A=70℃
Power Dissipation
T_A=25℃
Linear Derating Factor
Operating Junction and Storage Temperature Range
THERMAL DATA
Parameter
Thermal Resistance Junction-ambient³
Max.
Symbol
V_DS
V_GS
I_D
I_D
I_D
P_D
Tj, Tstg
Symbol
R_θJA
Ratings
60
±20
3.0
2.3
10
2
0.016
-55 ~ +150
Unit
V
V
A
A
A
W
W/ ℃
℃
Ratings
62.5
Unit
℃/W
01-June-2005 Rev. A
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