SST2605 Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – P-Channel Enhancement Mode Power Mos.FET

Elektronische Bauelemente
SST2605
-4.0A, -30V,RDS(ON) 80m
P-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
Description
The SST2605 utiltzed advance processing techniques to achieve the lowest
possible on-resistance, extermely efficient and cost-effectiveness device.
The SST2605 is universally used for all commercial-industrial applications.
Features
* Fast Switching Characteristic
* Lower Gate Charge
* Small Footprint & Low Profile Package
D
G
SOT-26
0.37Ref.
2.60
3.00
0.25
0.20
0.60 Ref.
1.40
1.80
0.30
0.95 Ref.
0.55
2.70
0~0.1
3.10
1.20Ref.
o
0
o
10
Dimensions in millimeters
D
D
S
6
5
4
Date Code
2605
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current ³
Continuous Drain Current ³
Pulsed Drain Current ¹
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
S
Symbol
VDS
VGS
ID@TA=25 ^oC
ID@TA=70 ^oC
IDM
PD@TA=25 ^oC
Tj, Tstg
1
2
3
D
D
G
Ratings
-30
±20
-4.0
-3.3
-20
2.0
0.016
-55~+150
Unit
V
V
A
A
A
W
W / ^oC
o_C
Thermal Data
Parameter
Thermal Resistance Junction-ambient ³
Symbol
Rthj-a
Ratings
62.5
Unit
o_{C /W}
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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