SST2603 Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – P-Channel Enhancement Mode Power Mos.FET

Elektronische Bauelemente
SST2603
-5A, -20V,RDS(ON) 65m
P-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
Description
The SST2603 utilized advanced processing techniques to achieve the lowest
possible on-resistance, extremely efficient and cost-effectiveness device.
The SST2603 is universally used for all commercial
industrial surface mount application and suited for low
voltage applications such as DC/DC converters.
Features
* Small package outline
* Simple drive requirement
D
G
S
SOT-26
1.90REF
0.95REF 0.95REF
0.37 REF
2.60
3.00
1.2 REF
0.60 REF
1.40
1.80
0.30
0.55
2.70
0.10 Max
3.10
1.10
o
0
1.35
o
10
Dimensions in millimeters
Date Code
D DS
6 54
2603
12 3
DD G
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current ³
Continuous Drain Current ³
1,2
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID@TA=25 ^oC
ID@TA=70 ^oC
IDM
PD@TA=25 ^oC
Tj, Tstg
Ratings
-20
±12
-5
-4
-20
2
0.016
-55~+150
Unit
V
V
A
A
A
W
W / ^oC
o_C
Thermal Data
Parameter
Thermal Resistance Junction-ambient ³
Max.
Symbol
Rthj-a
Ratings
62.5
Unit
o_{C /W}
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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