SST2301J Datasheet, PDF (1/3 Pages) SeCoS Halbleitertechnologie GmbH – P-Channel Enhancement Mode MOSFET

Elektronische Bauelemente
SST2301J
-2.3A , -20V , R_DS(ON) 90 mΩ
P-Channel Enhancement Mode MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
SST2301J utilizes advanced processing techniques
to achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device. SOT-26 package
is universally used for all commercial-industrial
applications.
SOT-26
A
E
L
FEATURES
TrenchFET power MOSFET
APPLICATIONS
DC/DC converter
Load switch for portable devices
MARKING
S1
B
F
C
H
DG
K
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.60 3.00
1.40 1.80
1.30 MAX.
1.90 REF.
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0
0.10
0.60 REF.
0.12 REF.
0°
10°
0.95 REF.
PACKAGE INFORMATION
Package
MPQ
SOT-26
3K
Leader Size
7 inch
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
ID
Pulsed Drain Current
IDM
Power Dissipation
Junction and Storage Temperature Range
PD
TJ, TSTG
Thermal Resistance Rating
Thermal Resistance from Junction to Ambient
RθJA
Rating
-20
±8
-2.3
-10
0.35
150, -55~150
357
Unit
V
V
A
A
W
°C
°C / W
http://www.SeCoSGmbH.com/
09-Dec-2015 Rev. A
Any changes of specification will not be informed individually.
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