SSRF60N10 Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente
SSRF60N10
N-Ch Enhancement Mode Power MOSFET
51A, 100V, R_DS(ON) 78mΩ
RoHS Compliant Product
A suffix of “-C” specifies halogen free
DESCRIPTION
These miniature surface mount MOSFETs utilize a high cell density trench
process to provide Low R_DS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC converters and power management
in portable and battery-powered products such as computers, printers, PCMCIA
cards, cellular and cordless telephones.
FEATURES
 Low R_DS(on) provides higher efficiency and extends battery life.
 Low thermal impedance copper leadframe ITO-220 saves board
space.
 Fast switching speed.
 High performance trench technology.
PRODUCT SUMMARY
V_DS(V)
100
PRODUCT SUMMARY
R_DS(on) m(
78@V_GS= 10V
92@V_GS= 4.5V
I_D(A)
51 ^a

Gate

Drain
IT O-220
B
N
D
E
MA
H
JC
K
G
L
L
F
Dimensions in millimeters
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
15.00 15.60
9.50 10.50
13.00 Min
4.30 4.70
2.50 3.10
2.40 2.80
0.30 0.70
REF.
H
J
K
L
M
N
Millimeter
Min. Max.
3.00 3.80
0.90 1.50
0.50 0.90
2.34 2.74
2.50 2.90
 3.1 3.4

Source
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
Drain-Source Voltage
V_DS
100
Gate-Source Voltage
V_GS
±20
Continuous Drain Current ^a
I_D @T_C=25℃
51
Pulsed Drain Current ^b
I_DM
240
Continuous Source Current (Diode Conduction) ^a
I_S
90
Total Power Dissipation ^a
P_D @T_C=25℃
300
Operating Junction and Storage Temperature Range T_J, T_STG
-55 ~ 175
THERMAL RESISTANCE RATINGS
Maximum Thermal Resistance Junction-Ambient ^a
R_θJA
62.5
Maximum Thermal Resistance Junction-Case
R_θJC
0.5
Notes：
a. Package Limited.
b. Pulse width limited by maximum junction temperature.
UNIT
V
V
A
A
A
W
°C
°C / W
°C / W
http://www.SeCoSGmbH.com/
14-Jul-2010 Rev.A
Any changes of specification will not be informed individually.
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