SSRF4N60 Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – 4A , 600 V , RDS(ON) 2.4
N-Channel Enhancement Mode Power MOSFET

Elektronische Bauelemente
SSRF4N60
4A , 600 V , R_DS(ON) 2.4 Ω
N-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
The N-Channel MOSFET is used an advanced termination
scheme to provide enhanced voltage-blocking capability without
degrading performance over time. This advanced technology has
been especially tailored to minimize on-state resistance, provide
superior switching performance. This device is well suited for high
efficiency switched mode power suppliers, active power factor
correction, electronic lamp ballasts based half bridge topology.
FEATURES
Robust high voltage termination
Avalanche energy specified
Diode is characterized for use in bridge circuits
Source to Drain diode recovery time comparable to a
discrete fast recovery diode.
2
Drain
1
Gate
3
Source
ITO-220
B
N
D
E
MA
H
JC
K
G
L
L
F
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
14.60 15.70
9.50 10.50
12.60 14.00
4.30 4.70
2.30 3.2
2.30 2.80
0.30 0.70
REF.
H
J
K
L
M
N
Millimeter
Min. Max.
2.70 3.80
0.90 1.50
0.50 0.90
2.34 2.74
2.40 3.00
φ 3.0 φ 3.4
ABSOLUTE MAXIMUM RATINGS(T_C=25°C unless otherwise specified )
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
ID
Pulsed Drain Current
IDM
Power Dissipation²
PD
Derating factor above 25°C
Single Pulsed Avalanche Energy¹
EAS
Repetitive Avalanche Energy²
EAR
Operating Junction and Storage Temperature Range
TJ, Tstg
Thermal Resistance Rating
Maximum Junction to Ambient
RθJA
Maximum Junction to Case
RθJC
Notes:
1. L=30mH, IAS=4.4A, VDD=85V, RG=25Ω, Starting TJ=25°C
2. Repetitive Rating: Pulse width limited by maximum junction temperature
Ratings
600
±30
4.0
16
33
0.26
330
7.3
150,-55~150
62.5
3.79
Unit
V
V
A
A
W
W / °C
mJ
mJ
°C
°C / W
http://www.SeCoSGmbH.com/
5-Jul-2011 Rev. A
Any changes of specification will not be informed individually.
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