SSRF12N65SL Datasheet, PDF (1/5 Pages) SeCoS Halbleitertechnologie GmbH – N-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente
SSRF12N65SL
12A , 650V , R_DS(ON) 0.8Ω
N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen free
DESCRIPTION
The SSRF12N65SL is the highest performance trench
N-ch MOSFETs with extreme high cell density , which provide
excellent R_DS(on) and gate charge for most of the synchronous
buck converter applications .
FEATURES
Advanced high cell density Trench technology
Super Low Gate Charge
Excellent CdV/dt effect decline
100% EAS Guaranteed
Green Device Available
1
Gate
2
Drain
3
Source
ITO-220
B
N
D
E
MA
H
JC
K
G
L
L
F
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
14.60 16.50
9.50 10.50
12.60 14.00
4.30 5.10
2.30
3.2
2.30 3.10
0.30 0.75
REF.
H
J
K
L
M
N
Millimeter
Min. Max.
2.70 4.00
0.90 1.50
0.50 0.95
2.34 2.74
2.40 3.60
φ 3.0 φ 3.4
ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)
Parameter
Symbol
Rating
Drain-Source Voltage
VDS
650
Gate-Source Voltage
VGS
±30
TC=25°C
12
Continuous Drain Current
ID
TC=100°C
9
Pulsed Drain Current
IDM
48
Total Power Dissipation
TC=25°C
PD
Derate above 25°C
Single Pulse Avalanche Energy ¹
EAS
51
0.41
786
Operating Junction and Storage Temperature Range
TJ, TSTG
-55~150
Thermal Resistance Rating
Maximum Thermal Resistance Junction-Ambient
RθJA
120
Maximum Thermal Resistance Junction-Case
Notes:
1. L=30mH,IAS=6.66A, VDD=140V, RG=25Ω, Starting TJ =25°C
RθJC
2.44
Unit
V
V
A
A
A
W
mJ
°C
°C / W
°C / W
http://www.SeCoSGmbH.com/
07-Nov-2013 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 5