SSQF04N60J Datasheet, PDF (1/3 Pages) SeCoS Halbleitertechnologie GmbH – N-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente
SSQF04N60J
4A, 600V, R_DS(ON) 3Ω
N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen free
DESCRIPTION
This advanced high voltage MOSFET is designed to withstand
high energy in the avalanche mode and switch efficiently. This new
high energy device also offers a drain-to-source diode with fast
recovery time. Designed for high voltage, high speed switching
applications such as power supplies, converters, power motor
controls and bridge circuits
ITO-220J
FEATURES
High current rating
Lower R_DS(ON)
Lower capacitance
Lower total gate charge
Tighter VSD specifications
Specified avalanche energy
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
14.80 15.20
9.96 10.36
13.20 REF.
4.30 4.70
2.80 3.20
2.50 2.90
0.50 0.75
REF.
H
J
K
L
M
N
2
Drain
Millimeter
Min. Max.
3.60 4.00
1.30 REF.
0.50 0.75
2.54 REF.
2.70 REF.
φ 3.5 REF.
1
Gate
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
ID
Continuous Drain-Source Diode Forward Current
IS
Single Pulsed Avalanche Energy ¹
EAS
Maximum Lead Temperature for Soldering Purposes@
1/8’’ from case for 5 seconds
TL
Operating Junction and Storage Temperature Range
TJ, TSTG
Thermal Resistance Rating
Thermal Resistance from Junction to Ambient
RθJA
3
Source
Rating
600
±30
4
4
260
260
-55~150
62.5
Unit
V
V
A
A
mJ
°C
°C
°C/ W
http://www.SeCoSGmbH.com/
11-Dec-2015 Rev. A
Any changes of specification will not be informed individually.
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