SSQF02N60J Datasheet, PDF (1/3 Pages) SeCoS Halbleitertechnologie GmbH – N-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente
SSQF02N60J
2A, 600V, R_DS(ON) 4.4Ω
N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen free
DESCRIPTION
The high voltage MOSFET uses an advanced termination
scheme to provide enhanced voltage-blocking capability without
degrading performance over time. In addition, this advanced
MOSFET is designed to withstand high energy in avalanche
and commutation modes. The new energy efficient design also
offers a drain-to-source diode with a fast recovery time. Designed
for high voltage, high speed switching applications in power
suppliers, converters, and PWM motor controls, these devices
are particularly well suited for bridge circuits whose diode speed
and commutating safe operating areas are critical and offer
additional and safety margin against unexpected voltage transients.
ITO-220J
FEATURES
Robust high voltage termination
Specified avalanche energy
Source-to-drain diode recovery time comparable to a discrete
fast recovery diode
Diode is characterized for the use in bridge circuits
I_DSS and V_DS(ON) are specified at the elevated temperature
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
14.80 15.20
9.96 10.36
13.20 REF.
4.30 4.70
2.80 3.20
2.50 2.90
0.50 0.75
REF.
H
J
K
L
M
N
2
Drain
Millimeter
Min. Max.
3.60 4.00
1.30 REF.
0.50 0.75
2.54 REF.
2.70 REF.
φ 3.5 REF.
1
Gate
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
ID
Pulsed Drain Current
IDM
Power Dissipation
PD
Single Pulsed Avalanche Energy ¹
EAS
Junction and Storage Temperature Range
TJ, TSTG
Thermal Resistance Rating
Thermal Resistance from Junction to Ambient
Notes:
1. EAS condition: L=64mH, IL=2A, VDD=50V, RG=25Ω, TJ=25°C.
RθJA
3
Source
Rating
600
±20
2
9
2
128
150, -55~150
62.5
Unit
V
V
A
A
W
mJ
°C
°C/ W
http://www.SeCoSGmbH.com/
11-Dec-2015 Rev. A
Any changes of specification will not be informed individually.
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