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| SSQ640J Datasheet, PDF (1/3 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode Power MOSFET | |||
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Elektronische Bauelemente
SSQ640J
18A, 200V, RDS(ON) 180mâ¦
N-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of â-Câ specifies halogen free
DESCRIPTION
Third Generation HEXFETs from International Rectifier
provide the designers with the best combination of fast
switching, ruggedized device design, low on-resistance
and cost effectiveness.
TO-220J package is universally preferred for all commercial-
industrial applications at power dissipation levels to approximately
50 watts. Low thermal resistance and low package cost of TO-220J
contribute to its wide acceptance throughout the industries.
TO-220J
FEATURES
Dynamic dv/dt rating
Repetitive avalanche rated
Fast switching
Ease of paralleling
Simple drive requirement
REF.
A
B
C
D
E
F
G
H
Millimeter
Min. Max.
10.010 10.350
3.735 3.935
2.590 2.890
12.060 12.460
1.170 1.370
0.710 0.910
13.400 13.800
2.540 TYP.
REF.
I
J
K
L
M
N
Q
Millimeter
Min. Max.
4.980 5.180
3.560 3.960
4.470 4.670
1.200 1.400
8.500 8.900
2.520 2.820
0.330 0.650
D
2
1
G
3
S
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current@VGS=10V
ID
Single Pulse Avalanche Energy 1
EAS
Power Dissipation
PD
Linear Derating Factor
Junction and Storage Temperature Range
TJ, TSTG
Thermal Resistance Rating
Thermal Resistance from Junction to Ambient
RθJA
Rating
200
±20
18
580
2
1
150, -55~150
62.5
Unit
V
V
A
mJ
W
W/ °C
°C
°C /W
http://www.SeCoSGmbH.com/
3-Dec-2015 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 3
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