SSQ187N80SG Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente
SSQ187 80SG
187A, 80V, R_{DS(O )} 3.9mΩ
-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen free
DESCRIPTION
The SSQ187N80SG is the highest performance trench
N-ch MOSFETs with extreme high cell density , which
provide excellent R_DS(ON) and gate charge for most of the
synchronous buck converter applications.
The SSQ187N80SG meet the RoHS and Green Product with
Function reliability approved.
TO-220
FEATURES
R_DS(on)≦3.9mΩ @V_GS=10V
High speed power switching
Enhanced Body diode dv/dt capability
Enhanced Avalanche Ruggedness
100% UIS Tested, 100% Rg Tested
TO-220 Package
MARKING
187N80SG
Date Code
1
Gate
2
Drain
3
Source
ABSOLUTE MAXIMUM RATINGS (TJ=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain Current (Silicon Limited)
TC=100°C
ID
Continuous Drain Current (Package Limited) TC=25°C
Pulsed Drain Current
IDM
Avalanche Energy, Single Pulse, @L=0.4mH TC=25°C
EAS
Power Dissipation
TC=25°C
PD
Operating Junction and Storage Temperature Range
TJ, TSTG
Thermal Resistance Ratings
Maximum Thermal Resistance Junction-Ambient
RθJA
Maximum Thermal Resistance Junction-Case
RθJC
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
9.96 10.36
14.7
16
2.74 BSC.
12.7 14.73
1.15 1.82
0.39 1.01
3.56 4.82
REF.
H
I
J
K
L
M
Millimeter
Min. Max.
2.54 BSC.
2.04 2.92
3.745 REF.
0.356 0.5
5.85 6.85
0.51 1.39
Ratings
80
±20
187
132
120
500
720
250
-55 ~ 175
60
0.6
Unit
V
V
A
A
mJ
W
°C
°C / W
http://www.SeCoSGmbH.com/
29-Jun-2017 Rev. A
Any changes of specification will not be informed individually.
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