SSQ07N60J Datasheet, PDF (1/3 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode Power MOSFET

Elektronische Bauelemente
SSQ07N60J
7 A, 600 V, R_DS(ON) 1.3 Ω
N-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen free
DESCRIPTION
The high voltage MOSFET uses an advanced termination
scheme to provide enhanced voltage-blocking capability without
degrading performance over time. In addition, this advanced
MOSFET is designed to withstand high energy in avalanche and
commutation modes. The new energy efficient design also offers
a drain-to-source diode with a fast recovery time. Designed for
high voltage, high speed switching applications in power suppliers,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional and safety
margin against unexpected voltage transients.
TO-220J
FEATURES
Robust High Voltage Termination
Avalanche Energy Specified
Source-to-Drain Diode Recovery Time Comparable to
a Discrete Fast Recovery Diode
Diode is characterized for The Use in Bridging Circuits
I_DSS and V_DS(ON) Specified at Elevated Temperature
REF.
A
B
C
D
E
F
G
H
Millimeter
Min. Max.
10.010 10.350
3.735 3.935
2.590 2.890
12.060 12.460
1.170 1.370
0.710 0.910
13.400 13.800
2.540 TYP.
REF.
I
J
K
L
M
N
Q
Millimeter
Min. Max.
4.980 5.180
3.560 3.960
4.470 4.670
1.200 1.400
8.500 8.900
2.520 2.820
0.330 0.650
D
2
1
G
3
S
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
ID
Continuous Drain-Source Diode Forward Current
IDM
Power Dissipation
PD
Single Pulsed Avalanche Energy ¹
EAS
Operating Junction and Storage Temperature Range
TJ, TSTG
Thermal Resistance Rating
Thermal Resistance from Junction to Ambient
RθJA
Rating
600
±20
7
20
2
530
150, -55~150
62.5
Unit
V
V
A
A
W
mJ
°C
°C/W
http://www.SeCoSGmbH.com/
6-Nov-2015 Rev. A
Any changes of specification will not be informed individually.
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