SSQ04N60J Datasheet, PDF (1/3 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode Power MOSFET

Elektronische Bauelemente
SSQ04N60J
4 A, 600 V, R_DS(ON) 3 Ω
N-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen free
DESCRIPTION
This advanced high voltage MOSFET is designed to withstand
high energy in the avalanche mode and switch efficiently. This new
high energy device also offers a drain-to-source diode with fast
recovery time. Designed for high voltage, high speed switching
applications such as power supplies, converters, power motor
control and bridge circuits.
TO-220J
FEATURES
High Current Rating
Low R_DS(ON)
Lower Capacitance
Lower Total Gate Charge
Tighter VSD Specifications
Avalanche Energy Specified
REF.
A
B
C
D
E
F
G
H
Millimeter
Min. Max.
10.010 10.350
3.735 3.935
2.590 2.890
12.060 12.460
1.170 1.370
0.710 0.910
13.400 13.800
2.540 TYP.
REF.
I
J
K
L
M
N
Q
Millimeter
Min. Max.
4.980 5.180
3.560 3.960
4.470 4.670
1.200 1.400
8.500 8.900
2.520 2.820
0.330 0.650
D
2
1
G
3
S
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
ID
Continuous Drain-Source Diode Forward Current
IS
Single Pulse Avalanche Energy ¹
EAS
Maximum Lead Temperature for Soldering Purposes@1/8’’ from case
for 5 seconds
TL
Operating Junction and Storage Temperature Range
TJ, TSTG
Thermal Resistance Rating
Thermal Resistance from Junction to Ambient
RθJA
Rating
600
±30
4
4
260
260
-55~150
62.5
Unit
V
V
A
A
mJ
°C
°C
°C/W
http://www.SeCoSGmbH.com/
4-Nov-2015 Rev. A
Any changes of specification will not be informed individually.
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