SSPS920NE_15 Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – Dual-N Channel Mode Power MOSFET

Elektronische Bauelemente
SSPS920NE
7.1 A, 20 V, R_DS(ON) 20 mΩ
Dual-N Channel Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs
utilize a high cell density trench process to
provide low R_DS(on) and to ensure minimal
power loss and heat dissipation. Typical
applications are DC-DC converters and power
management In portable and battery-powered
products such as computers, printers, PCMCIA
cards, cellular and cordless telephones.
DFN3*3-8PP
FEATURES
Low R_DS(on) provides higher efficiency and
extends battery life.
Low thermal impedance copper leadframe
SOP-8 saves board space.
Fast switching speed.
High performance trench technology.
PACKAGE INFORMATION
Package
MPQ
DFN3*3-8PP
3K
Leader Size
13’ inch
REF.
A
B
C
D
Millimeter
Min. Max.
3.0 BSC.
2.8 BSC.
0.20 0.35
0.65 BSC.
REF.
E
F
G
Millimeter
Min. Max.
0.08 0.25
2.3 BSC
0.7
0.9
MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current ¹
TA = 25°C
ID
TA = 70°C
Pulsed Drain Current ²
IDM
Continuous Source Current (Diode Conduction) ¹
IS
Total Power Dissipation ¹
TA = 25°C
PD
TA = 70°C
Operating Junction & Storage Temperature Range
TJ, TSTG
Thermal Resistance Ratings
Thermal Resistance Junction-ambient (Max.) ^{1 t≦10 sec}
RθJA
Steady State
Notes:
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
Ratings
20
±8
7.1
5.8
40
2.1
1.5
1
-55 ~ 150
83
120
Unit
V
V
A
A
A
A
W
W
°C
°C / W
°C / W
http://www.SeCoSGmbH.com/
28-Jun-2013 Rev. A
Any changes of specification will not be informed individually.
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