SSPS7338N Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente
SSPS7338
19A, 30V, R_{DS(O )} 6.9 mΩ
-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs
utilize a high cell density trench process to provide
low R_DS(on) and to ensure minimal power loss and
heat dissipation.
FEATURES
Low R_DS(on) trench technology
Low thermal impedance
Fast switching speed
APPLICATION
Industrial D/C/DC conversion circuits
White LED boost converters
Automotive systems
PACKAGE INFORMATION
Package
MPQ
DFN3x3-8PP
3K
Leader Size
13 inch
DFN3x3-8PP
B
D
C
θ
eE
A
d
b
g
F
G
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
0.70 0.90
3.00BSC
0.10 0.25
1.80 2.3
3.2BSC
0.01 0.02
2.35BSC
REF.
θ
b
d
e
g
Millimeter
Min. Max.
0° 12°
0.20 0.40
0.65BSC
3.00BSC
0.70(TYP.)
MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current ¹
TA=25°C
ID
TA=70°C
Pulsed Drain Current ²
IDM
Continuous Source Current (Diode Conduction) ¹
IS
Power Dissipation ¹
TA=25°C
PD
TA=70°C
Operating Junction and Storage Temperature Range
TJ, TSTG
Thermal Resistance Ratings
Maximum Thermal Resistance from
t≦10 sec
Junction to Ambient ¹
Steady State
RθJA
Notes:
1.
2.
The surface of the device is mounted on a 1” x 1” FR4 board.
The pulse width is limited by the maximum junction temperature.
Rating
30
±20
19
16
80
5.1
3.5
2
-55~150
35
81
Unit
V
V
A
A
A
A
W
W
°C
°C / W
°C / W
http://www.SeCoSGmbH.com/
25-Apr-2016 Rev. A
Any changes of specification will not be informed individually.
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