SSPS7334N Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – ±17 A , 30 V , RDS(ON) 8.5 m
N-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente
SSPS7334N
±17 A , 30 V , R_DS(ON) 8.5 mΩ
N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs
utilize a high cell density trench process to provide
low R_DS(on) and to ensure minimal power loss and
heat dissipation.
FEATURES
Low R_DS(on) provides higher efficiency and
extends battery life
Low thermal impedance copper leadframe
DFN3x3-8PP saves board space
Fast switching speed
High performance trench technology
APPLICATION
DC-DC converters and power management in portable
and battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless telephones.
PACKAGE INFORMATION
Package
MPQ
DFN3x3-8PP
3K
Leader Size
13 inch
Top View
DFN3x3-8PP
B
D
C
θ
eE
A
d
b
g
F
G
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
0.70 0.90
3.00BSC
0.10 0.25
1.80 2.3
3.2BSC
0.01 0.02
2.35BSC
REF.
θ
b
d
e
g
Millimeter
Min. Max.
0° 12°
0.20 0.40
0.65BSC
3.00BSC
0.70(TYP.)
MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current ¹
TA = 25°C
TA = 70°C
Pulsed Drain Current ²
Continuous Source Current (Diode Conduction) ¹
Total Power Dissipation ¹
TA = 25°C
TA = 70°C
Operating Junction & Storage Temperature Range
VDS
VGS
ID
IDM
IS
PD
TJ, TSTG
Thermal Resistance Ratings
Thermal Resistance Junction-Case (Max.) ¹ t ≦ 5 sec
Thermal Resistance Junction-Ambient (Max.) ¹ t ≦ 5 sec
Notes:
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
RθJC
RθJA
Ratings
30
±20
17
12
40
2
3.5
2.0
-55~150
25
50
Unit
V
V
A
A
A
A
W
W
°C
°C / W
°C / W
http://www.SeCoSGmbH.com/
19-Jul-2011 Rev. A
Any changes of specification will not be informed individually.
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