SSPR7N10 Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode Power MOSFET

Elektronische Bauelemente
SSPR7N10
7.5A , 100V , R_DS(ON) 112 mΩ
N-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SSPR7N10 provide the designer with the best
combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness. The SPR-8PP package
is universally preferred for all commercial-industrial surface
mount applications and suited for low voltage applications
such as DC/DC converters.
SPR-8PP
FEATURES
Lower Gate Charge
Simple Drive Requirement
Fast Switching Characteristic
MARKING
7N10
= Date code
PACKAGE INFORMATION
Package
MPQ
SPR-8PP
3K
Leader Size
13 inch
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
3.25 3.40
3.05 3.25
3.20 3.40
3.00 3.20
0.65 BSC.
2.40 2.60
REF.
G
H
I
J
K
L
Millimeter
Min. Max.
1.35 1.55
0.24 0.35
1.13 REF.
0.30 0.50
0.10 0.20
0.70 0.90
S
D
S
D
S
D
G
D
ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)
Parameter
Symbol
Rating
Drain-Source Voltage
VDS
100
Gate-Source Voltage
VGS
±20
Continuous Drain Current ¹@VGS=10V ^TC=25°C
ID
7.5
TC=70°C
5.5
Pulsed Drain Current ²
IDM
13
Single Pulse Avalanche Energy ³
EAS
8
Avalanche Current
Power Dissipation ⁴
TC=25°C
Operating Junction & Storage Temperature
IAS
PD
TJ, TSTG
11
20.8
-55~150
Thermal Resistance Rating
Thermal Resistance Junction-Ambient¹(Max).
RθJA
50
Thermal Resistance Junction-Case¹(Max).
RθJC
6
Unit
V
V
A
A
mJ
A
W
°C
°C / W
°C / W
http://www.SeCoSGmbH.com/
20-May-2014 Rev.A
Any changes of specification will not be informed individually.
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