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| SSPR42P03_15 Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – P-Channel Enhancement Mode Power MOSFET | |||
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Elektronische Bauelemente
SSPR42P03
-42A , -30V , RDS(ON) 15 mâ¦
P-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of â-Câ specifies halogen & lead-free
DESCRIPTION
The SSPR42P03 provide the designer with the best
combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness. The SPR-8PP package
is universally preferred for all commercial-industrial surface
mount applications and suited for low voltage applications
such as DC/DC converters.
SPR-8PP
FEATURES
Lower Gate Charge
Simple Drive Requirement
Fast Switching Characteristic
MARKING
42P03
= Date code
PACKAGE INFORMATION
Package
MPQ
SPR-8PP
3K
Leader Size
13 inch
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
3.25 3.40
3.05 3.25
3.20 3.40
3.00 3.20
0.65 BSC.
2.40 2.60
REF.
G
H
I
J
K
L
Millimeter
Min. Max.
1.35 1.55
0.24 0.35
1.13 REF.
0.30 0.50
0.10 0.20
0.70 0.90
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Rating
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current 1@VGS=10V TC=25°C
TC=100°C
Pulsed Drain Current 2
Single Pulse Avalanche Energy 3
VDS
VGS
ID
IDM
EAS
-30
±20
-42
-27
-130
264
Avalanche Current
Power Dissipation 4
TC=25°C
Operating Junction & Storage Temperature
IAS
PD
TJ, TSTG
-42
37
-55~150
Thermal Resistance Rating
Thermal Resistance Junction-Ambient1(Max).
RθJA
Thermal Resistance Junction-Case1(Max).
RθJC
75
3.38
Unit
V
V
A
A
mJ
A
W
°C
°C / W
°C / W
http://www.SeCoSGmbH.com/
20-May-2014 Rev.A
Any changes of specification will not be informed individually.
Page 1 of 4
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