 English |
|
|
|
|
|
|
|
| SSPR32P03_15 Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – P-Channel Enhancement Mode Power MOSFET | |||
| |||
|
Elektronische Bauelemente
SSPR32P03
-32A , -30V , RDS(ON) 27 mâ¦
P-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of â-Câ specifies halogen & lead-free
DESCRIPTION
The SSPR32P03 provide the designer with the best
combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness. The SPR-8PP package
is universally preferred for all commercial-industrial surface
mount applications and suited for low voltage applications
such as DC/DC converters.
SPR-8PP
FEATURES
Lower Gate Charge
Simple Drive Requirement
Fast Switching Characteristic
MARKING
32P03
= Date code
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
3.25 3.40
3.05 3.25
3.20 3.40
3.00 3.20
0.65 BSC.
2.40 2.60
REF.
G
H
I
J
K
L
Millimeter
Min. Max.
1.35 1.55
0.24 0.35
1.13 REF.
0.30 0.50
0.10 0.20
0.70 0.90
PACKAGE INFORMATION
Package
MPQ
SPR-8PP
3K
Leader Size
13 inch
S
D
S
D
S
D
G
D
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Rating
Drain-Source Voltage
VDS
-30
Gate-Source Voltage
VGS
±20
TC=25°C
-32
Continuous Drain Current 1@VGS=10V TC=100°C
ID
-20
TA=25°C
-7.7
TA=70°C
-6.2
Pulsed Drain Current 2
IDM
-65
Single Pulse Avalanche Energy 3
EAS
176
Avalanche Current
IAS
-34
Power Dissipation 4
TC=25°C
PD
29
Operating Junction & Storage Temperature
TJ, TSTG
55~150
Thermal Resistance Rating
Thermal Resistance Junction-Ambient1(Max).
RθJA
75
Thermal Resistance Junction-Case1(Max).
RθJC
4.3
Unit
V
V
A
A
mJ
A
W
°C
°C / W
°C / W
http://www.SeCoSGmbH.com/
28-Apr-2014 Rev.A
Any changes of specification will not be informed individually.
Page 1 of 4
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese