SSPF7490N Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente
SSPF7490N
8.3A, 150V, R_DS(ON) 48 mΩ
N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs
utilize a high cell density trench process to provide
low R_DS(on) and to ensure minimal power loss and
heat dissipation.
FEATURES
Low R_DS(on) trench technology
Low thermal impedance
Fast switching speed
APPLICATION
Industrial D/C/DC conversion circuits
White LED boost converters
Automotive systems
PACKAGE INFORMATION
Package
MPQ
DFN5x6-8PP
3K
Leader Size
13 inch
DFN5x6-8PP
B
D
C
θ
eE
A
d
b
g
F
G
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
0.85 1
5.2 BSC
0.15 0.25
3.81 BSC
6.05 BSC
0.25 BSC
3.81 BSC
REF.
θ
b
d
e
g
Millimeter
Min. Max.
0° 10°
0.3 0.5
1.27 BSC
5.55 BSC
1.2 TYP.
MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current ¹
TA=25°C
ID
TA=70°C
Pulsed Drain Current ²
IDM
Continuous Source Current (Diode Conduction) ¹
IS
Power Dissipation ¹
TA=25°C
PD
TA=70°C
Operating Junction and Storage Temperature Range
TJ, TSTG
Thermal Resistance Ratings
Maximum Thermal Resistance from
t≦10 sec
Junction to Ambient ¹
Steady State
RθJA
Notes:
1.
2.
The surface of the device is mounted on a 1” x 1” FR4 board.
The pulse width is limited by the maximum junction temperature.
Rating
150
±20
8.3
6.7
50
7.1
5
3.2
-55~150
25
65
Unit
V
V
A
A
A
A
W
W
°C
°C / W
°C / W
http://www.SeCoSGmbH.com/
11-May-2016 Rev. A
Any changes of specification will not be informed individually.
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