SSP7480N Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement MOSFET

Elektronische Bauelemente
SSP7480N
12 A, 80 V, R_DS(ON) 26 m
N-Channel Enhancement MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a high cell density trench process
to provide low R_DS(on) and to ensure minimal power loss and heat dissipation.
Typical applications are DC-DC converters and power management in
portable and battery-powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
FEATURES
 Low R_DS(on) provides higher efficiency and extends battery life.
 Low thermal impedance copper leadframe SOP-8PP saves board
space.
 Fast switching speed.
 High performance trench technology.
PRODUCT SUMMARY
PRODUCT SUMMARY
V_DS(V)
80
R_DS(on) (m
26@V_GS= 10V
36@V_GS= 4.5V
I_D(A)
12
11

Drain

Gate
SOP-8PP
B
D
C
θ
eE
A
d
b
g
F
G
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
1.00 1.10
5.70 5.80
0.20 0.30
3.61 3.98
5.40 6.10
0.08 0.20
3.60 3.99
REF.
θ
b
d
e
g
Millimeter
Min. Max.
0° 12°
0.33 0.51
1.27BSC
1.35 1.75
1.10
-

Source
ABSOLUTE MAXIMUM RATINGS AND THERMAL DATA(T_A = 25°C unless otherwise specified)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current ^A
T_A=25°C
T_A=70°C
Pulsed Drain Current ^B
Continuous Source Current (Diode Conduction) ^A
Power Dissipation ^A
T_A=25°C
T_A=70°C
Operating Junction and Storage Temperature Range
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_STG
THERMAL RESISTANCE DATA
Maximum Junction to Ambient ^A
t≦10 sec
Steady-State
R_θJA
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature.
RATING
80
20
12
9
50
2.3
5.0
3.2
-55 ~ 150
25
65
UNIT
V
V
A
A
A
W
°C
°C / W
http://www.SeCoSGmbH.com/
28-Jun-2010 Rev. A
Any changes of specification will not be informed individually.
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