SSP7466N Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode Power MOSFET

Elektronische Bauelemente
SSP7466N
20A, 60V, R_DS(ON) 6mΩ
N-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
SSP7466N uses advanced trench technology and design to
provide excellent R_DS(ON) with low gate charge. It can be used
in a wide variety of applications.
SOP-8PP
FEATURES
Low R_DS(ON) trench technology
Low thermal resistance
Fast switching speed
APPLICATIONS
White LED boost converter
Automotive systems
Industrial DC/DC conversion circuits
PACKAGE INFORMATION
Package
MPQ
SOP-8PP
3K
Leader Size
13 inch
REF. ^Millimeter REF. ^Millimeter
S
D
Min. Max.
Min. Max.
A 0.80 1.00 θ 0° 10°
S
D
B
5.3 BSC.
b
5.2 BCS
C 0.15 0.25 c 0.20 0.50
S
D
D
3.8 BCS.
d
1.27BSC
E
6.05 BCS.
e
5.65 BCS.
F 0.03 0.30 f 0.10 0.40
G
D
G
4.35 BCS.
g
1.3 BCS.
L 0.40 0.70
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current ¹
TA=25°C
ID
TA=70°C
Pulsed Drain Current ²
IDM
Continuous Source Current(Diode Conduction) ¹
IS
Power Dissipation ¹
Maximum Thermal Resistance
from Junction to Ambient ¹
TA=25°C
TA=70°C
t≦10sec
Steady State
PD
RθJA
Operating Junction and Storage Temperature Range
TJ, TSTG
Notes:
1. The surface of the device is mounted on a 1’’ × 1’’ FR4 board.
2. Pulse width is limited by the maximum junction temperature.
Rating
60
±20
20
19
100
5
3.5
3.2
35
65
150, -55~150
Unit
V
V
A
A
mJ
W
°C / W
°C
http://www.SeCoSGmbH.com/
04-Jan-2016 Rev. A
Any changes of specification will not be informed individually.
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