SSP7464N_15 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement MOSFET

Elektronische Bauelemente
SSP7464N
6.4 A, 60 V, R_DS(ON) 82 m
N-Channel Enhancement MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a high cell
density trench process to provide low R_DS(on) and to ensure
minimal power loss and heat dissipation. Typical applications are
DC-DC converters and power management in portable and
battery-powered products such as computers, printers, PCMCIA cards,
cellular and cordless telephones.
SOP-8PP
FEATURES
 Low R_DS(on) provides higher efficiency and extends battery life.
 Low thermal impedance copper leadframe SOP-8PP saves board
space.
 Fast switching speed.
 High performance trench technology.
PACKAGE INFORMATION
Package
MPQ
SOP-8PP
3K
Leader Size
13 inch
REF.
A
B
C
D
E
F
G
L
Millimeter
Min. Max.
0.85 1.00
5.3 BSC.
0.15 0.25
3.8 BCS.
6.05 BCS.
0.03 0.30
4.35 BCS.
0.40 0.70
REF.
θ
b
c
d
e
f
g
Millimeter
Min. Max.
0° 10°
5.2 BCS
0.30 0.50
1.27BSC
5.55 BCS.
0.10 0.40
1.2 BCS.
ABSOLUTE MAXIMUM RATINGS AND THERMAL DATA(T_A = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Unit
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current ¹
T_A=25°C
I_D
T_A=70°C
Pulsed Drain Current ²
I_DM
Continuous Source Current (Diode Conduction) ¹
I_S
Power Dissipation ¹
T_A=25°C
P_D
T_A=70°C
Operating Junction and Storage Temperature Range
T_J, T_STG
Thermal Resistance Data
Maximum Junction to Ambient ¹
t≦10 sec
Steady-State
Notes
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
R_θJA
60
20
6.4
5.3
20
2.3
5.0
3.2
-55 ~ 150
25
65
V
V
A
A
A
W
°C
°C / W
http://www.SeCoSGmbH.com/
18-Sep-2013 Rev. B
Any changes of specification will not be informed individually.
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