SSP7454N Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement MOSFET

Elektronische Bauelemente
SSP7454N
26A, 60V, R_DS(ON) 4.9mΩ
N-Channel Enhancement MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a high
cell density trench process to provide low R_DS(on) and to
ensure minimal power loss and heat dissipation. Typical
applications are DC-DC converters and power management
in portable and battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless telephones.
FEATURES
Low R_DS(on) trench technology.
Low thermal impedance.
Fast switching speed.
APPLICATIONS
DC/DC conversion circuits.
Motor drives.
PACKAGE INFORMATION
Package
MPQ
SOP-8PP
3K
Leader Size
13 inch
SOP-8PP
REF.
A
B
C
D
E
F
G
L
Millimeter
Min. Max.
0.80 1.00
5.3 BSC.
0.15 0.25
3.8 BCS.
6.05 BCS.
0.03 0.30
4.35 BCS.
0.40 0.70
REF.
θ
b
c
d
e
f
g
Millimeter
Min. Max.
0° 10°
5.2 BCS
0.20 0.50
1.27BSC
5.65 BCS.
0.10 0.40
1.3 BCS.
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current ¹
TA=25°C
ID
TA=70°C
Pulsed Drain Current ²
IDM
Continuous Source Current (Diode Conduction) ¹
IS
Power Dissipation ¹
TA=25°C
PD
TA=70°C
Operating Junction and Storage Temperature Range
TJ, TSTG
Thermal Resistance Rating
Maximum Thermal Resistance from
Junction to Ambient ¹
t≦10 sec
Steady State
Notes:
1.
2.
The surface of the device is mounted on a 1” x 1” FR4 board.
Pulse width is limited by the maximum junction temperature.
RθJA
Rating
60
±20
26
21
100
7.3
5
3.2
150, -55~150
25
65
Unit
V
V
A
A
A
W
°C
°C / W
http://www.SeCoSGmbH.com/
04-Jan-2016 Rev. A
Any changes of specification will not be informed individually.
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