SSP7438N_15 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement MOSFET

Elektronische Bauelemente
SSP7438N
22 A, 30 V, R_DS(ON) 7.5 m
N-Channel Enhancement MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a high cell
density trench process to provide low R_DS(on) and to ensure
minimal power loss and heat dissipation.
SOP-8PP
FEATURES
 Low R_DS(on) provides higher efficiency and extends battery life.
 Low thermal impedance copper leadframe SOP-8PP saves board
space.
 Fast switching speed.
 High performance trench technology.
APPLICATION
DC-DC converters and power management in
portable and battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless telephones
PACKAGE INFORMATION
Package
MPQ
SOP-8PP
3K
Leader Size
13’ inch
REF.
A
B
C
D
E
F
G
L
Millimeter
Min. Max.
0.85 1.00
5.3 BSC.
0.15 0.25
3.8 BCS.
6.05 BCS.
0.03 0.30
4.35 BCS.
0.40 0.70
REF.
θ
b
c
d
e
f
g
Millimeter
Min. Max.
0° 10°
5.2 BCS
0.30 0.50
1.27BSC
5.55 BCS.
0.10 0.40
1.2 BCS.
ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current ¹
Pulsed Drain Current ²
T_A=25°C
I_D
T_A=70°C
I_DM
Continuous Source Current (Diode Conduction) ¹
I_S
Power Dissipation ¹
T_A=25°C
P_D
T_A=70°C
Operating Junction and Storage Temperature Range
T_J, T_STG
Thermal Resistance Rating
Maximum Junction to Ambient ¹
t≦10 sec
Steady State
Notes
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
R_θJA
Rating
30
20
22
18
50
2.3
5
2.2
-55 ~ 150
25
65
Unit
V
V
A
A
A
W
°C
°C / W
http://www.SeCoSGmbH.com/
18-Sep-2013 Rev. B
Any changes of specification will not be informed individually.
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