SSP7431P Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – P-Channel Enhancement MOSFET

Elektronische Bauelemente
SSP7431P
-17A, -30V, R_DS(ON) 13 m
P-Channel Enhancement MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize
a high cell density trench process to provide low R_DS(on)
and to ensure minimal power loss and heat dissipation.
FEATURES
 Low R_DS(on) provides higher efficiency and extends
battery life.
 Low thermal impedance copper leadframe SOP-8PP
saves board space.
 Fast switching speed.
 High performance trench technology.
APPLICATION
DC-DC converters and power management in
portable and battery-powered products such as
computers, printers, PCMCIA cards, cellular and
cordless telephones.
PACKAGE INFORMATION
Package
MPQ
SOP-8PP
3K
Leader Size
7’ inch
SOP-8PP
B
D
C
θ
eE
A
d
b
g
F
G
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
1.00 1.10
5.70 5.80
0.20 0.30
3.61 3.98
5.40 6.10
0.08 0.20
3.60 3.99
REF.
θ
b
d
e
g
Millimeter
Min. Max.
0° 12°
0.33 0.51
1.27BSC
1.35 1.75
1.10
-
S
D
S
D
S
D
G
D
ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current ¹
T_A=25°C
T_A=70°C
I_D
Pulsed Drain Current ²
I_DM
Continuous Source Current (Diode Conduction) ¹
I_S
Power Dissipation ¹
T_A=25°C
T_A=70°C
P_D
Operating Junction and Storage Temperature Range
T_J, T_STG
Thermal Resistance Rating
Maximum Junction to Ambient ¹
t≦10 sec
Steady-State
Notes:
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
R_θJA
http://www.SeCoSGmbH.com/
01-May-2011 Rev. B
Rating
-30
±20
-17
-14
-50
-2.1
5.0
3.2
-55~150
25
65
Unit
V
V
A
A
A
W
°C
°C / W
Any changes of specification will not be informed individually.
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