SSP7404NA_15 Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement MOSFET

Elektronische Bauelemente
SSP7404NA
35A, 30V, R_DS(ON) 2.8 mΩ
N-Channel Enhancement MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Low R_DS(on) trench technology.
Low thermal impedance.
Fast switching speed.
SOP-8PP
APPLICATIONS
White LED boost converters.
Automotive Systems.
Industrial DC/DC Conversion Circuits.
PACKAGE INFORMATION
Package
MPQ
SOP-8PP
3K
Leader Size
13 inch
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
0.85 1.00
5.40 5.60
0.15 0.25
3.71 3.91
5.95 6.15
0.08 0.24
4.25 4.45
REF.
θ
b
c
d
e
f
g
Millimeter
Min. Max.
0° 10°
5.10 5.30
0.30 0.50
1.27BSC
5.45 5.65
0.20 0.35
1.10 -
ABSOLUTE MAXIMUM RATINGS(T_A=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current ¹
TA=25°C
ID
TA=70°C
Pulsed Drain Current ²
IDM
Continuous Source Current (Diode Conduction) ¹
IS
Power Dissipation ¹
TA=25°C
PD
TA=70°C
Operating Junction and Storage Temperature Range
TJ, TSTG
Thermal Resistance Data
Maximum Junction to Ambient ¹
t≦10 sec
Steady State
Notes:
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
RθJA
http://www.SeCoSGmbH.com/
30-Dec-2013 Rev. A
Rating
30
±20
35
28
100
7.3
5
3.2
-55~150
25
65
Unit
V
V
A
A
A
W
°C
°C / W
Any changes of specification will not be informed individually.
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