SSP1027 Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – P-Channel Enhancement Mode Mos.FET

Elektronische Bauelemente
SSP1027
-3.5 A, -20 V, RDS(ON) 97 mΩ
P-Channel Enhancement Mode Mos.FET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
The SSP1027 utilized advance processing techniques to achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device. The SSP1027 is universally used for all commercial-industrial applications.
FEATURES
z Low On-Resistance
z Low Gate Charge
PACKAGE DIMENSIONS
TDFN
S1 G1 D2
D1 D2
D1 G2 S2
S1 1
G1 2
D2 3
6 D1
5 G2
4 S2
PIN#1 Indent
C
A
E
Side View
J
BI
F
D
G
KH
Bottom View
REF.
A
B
C
D
E
Millimeter
Min. Max.
1.900 2.100
1.900 2.100
0.650 0.800
0.203 REF
0.000 0.050
REF.
F
G
H
I
J
K
Millimeter
Min. Max.
0.520 0.720
0.650 TYP
0.200 MIN
0.150 0.350
0.900 1.100
0.250 0.350
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³
Pulsed Drain Current¹
Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
V_DS
V_GS
I_D @T_A=25℃
I_D @T_A=70℃
I_DM
P_D @T_A=25℃
T_J, T_STG
THERMAL DATA
Parameter
Thermal Resistance Junction-ambient³ (Max)
Symbol
R_θJA
Ratings
-20
±12
-3.5
-2.8
-15
0.7
0.006
-55 ~ +150
Ratings
98
Unit
V
V
A
A
W
W/℃
℃
Unit
℃/W
01-June-2003 Rev. A
Page 1 of 4