SSN3541 Datasheet, PDF (1/3 Pages) SeCoS Halbleitertechnologie GmbH – N Channel Enhancement MOSFET

Elektronische Bauelemente
SSN3541
0.1 A, 30 V, R_DS(ON) 8 Ω
N Channel Enhancement MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Low on-resistance
Fast switching speed
Drive circuits can be simple
Parallel use is easy
Low voltage drive makes this device ideal for
portable equipment
SOT-723
1 GATE
2 SOURCE
3 DRAIN
APPLICATION
Interfacing
Switching
MARKING
KN
PACKAGE INFORMATION
Package
MPQ
SOT-723
8K
Leader Size
7 inch
REF.
A
B
C
D
E
Millimeter
Min. Max.
1.150
0.750
-
1.250
0.850
0.500
1.150 1.250
0.800TYP.
REF.
F
G
H
I
Millimeter
Min. Max.
0.170 0.270
0.270 0.370
0
0.050
-
0.150
MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
ID
Total Power Dissipation
PD
Thermal Resistance Junction-ambient
RθJA
Operating Junction & Storage Temperature Range
Notes:
1. Pw≤10µs ,Duty cycle≤1%
TJ, TSTG
Ratings
30
±20
100
0.15
833
150, -55~150
Unit
V
V
mA
W
°C / W
°C
http://www.SeCoSGmbH.com/
09-Aug-2012 Rev. A
Any changes of specification will not be informed individually.
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