SSN3139K Datasheet, PDF (1/3 Pages) SeCoS Halbleitertechnologie GmbH – P Channel Enhancement MOSFET

Elektronische Bauelemente
SSN3139K
-0.66 A, -20 V, R_DS(ON) 520 m
P Channel Enhancement MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
 Low on-resistance
 Fast switching speed
 Drive circuits can be simple
 Parallel use is easy
 Low voltage drive makes this device ideal for
portable equipment
SOT-723
 GATE
 SOURCE
 DRAIN
APPLICATION
 Interfacing
 Switching
MARKING
KD
PACKAGE INFORMATION
Package
MPQ
SOT-723
8K
Leader Size
7 inch
REF.
A
B
C
D
E
Millimeter
Min.
1.150
0.750
-
1.150
Max.
1.250
0.850
0.500
1.250
0.800TYP.
REF.
F
G
H
I
Millimeter
Min. Max.
0.170 0.270
0.270 0.370
0
0.050
-
0.150
Top View
MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current ¹
Symbol
V_DS
V_GS
I_D
Pulsed Drain Current (tp=10μs)
I_DM
Total Power Dissipation ¹
P_D
Thermal Resistance Junction-ambient ¹
R_θJA
Lead Temperature for Soldering Purposes
(1/8” from case for 10S)
T_L
Operating Junction & Storage Temperature Range
T_J, T_STG
Notes:
1. Surface mounted on FR4 board using the minimum recommended pad size
Ratings
-20
±6
-0.66
-1.2
150
833
260
150, -55~150
Unit
V
V
A
A
mW
°C / W
°C
°C
http://www.SeCoSGmbH.com/
12-Mar-2014 Rev. B
Any changes of specification will not be informed individually.
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