SSN3043 Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode Power MOSFET

Elektronische Bauelemente
SSN3043
255mA , 20V , R_DS(ON) 3.4Ω
N-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product
A Suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs reduce
power loss conserve energy, making this device ideal for
use in small power management circuitry.
FEATURES
Energy Efficient
SOT-723
1 GATE
2 SOURCE
3 DRAIN
APPLICATION
DC-DC converters, load switching, power management
in portable and battery–powered products such as computers,
printers, cellular and cordless telephones.
MARKING
KA
：Date Code
REF.
A
B
C
D
E
Millimeter
Min. Max.
1.150 1.250
0.750 0.850
-
0.500
1.150 1.250
0.800TYP.
REF.
F
G
H
I
Millimeter
Min. Max.
0.170 0.270
0.270 0.370
0 0.050
-
0.150
Top View
PACKAGE INFORMATION
Package
MPQ
SOT-723
8K
Leader Size
7 inch
THERMAL CHARACTERISTICS
Parameter
Symbol
Rating
Drain – Source Voltage
VDS
20
Gate – Source Voltage - Continuous
VGS
±10
Continuous Drain Current¹
Steady State ^TA=25°C
TA=85°C
ID
255
185
t≤ 5 s, TA=25°C
285
Power Dissipation ¹
Steady State ,TA=25°C
PD
440
t≤ 5 s, TA=25°C
545
Continuous Drain Current² Steady State ^TA=25°C
ID
210
TA=85°C
155
Power Dissipation²
Steady State ,TA=25°C
PD
310
Pulsed Drain Current (tp≤10µs)
Source Current (Body Diode) ²
IDM
400
IS
286
Maximum Lead Temperature for Soldering Purposes, (1/8”
from case for 10 seconds)
TL
260
Junction & Storage Temperature
TJ, TSTG
-55 ~ 150
NOTE:
1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces)
2. Surface−mounted on FR4 board using the minimum recommended pad size.
Unit
V
V
mA
mW
mA
mW
mA
mA
°C
°C
http://www.SeCoSGmbH.com/
28-Oct-2013 Rev. A
Any changes of specification will not be informed individually.
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