SSM9973A Datasheet, PDF (1/3 Pages) SeCoS Halbleitertechnologie GmbH – 5 A, 60V N-Channel Enhancement Mode Power MOSFET

Elektronische Bauelemente
SSM9973A
5 A, 60V
N-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product
A Suffix of “-C” specifies halogen & lead-free
SOT-223
DESCRIPTION
A
The SSM9973A provide the designer with the best combination of fast switching,
M
4
ruggedized design, low on-resistance and cost effectiveness.
Top View C B
The SOT-223 package is universally preferred for all commercial-industrial surface
mount applications and suited for low voltage applications such as DC/DC converters. ^{K L}
E
FEATURES
1
2
3
Simply drive requirement
D
F
GH
J
Super high density cell design for extremely low R_DS(ON)
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
6.20 6.70
6.70 7.30
3.30 3.70
1.42 1.90
4.50 4.70
0.60 0.82
REF.
G
H
J
K
L
M
Millimeter
Min. Max.
- 0.10
-
-
0.25 0.35
-
-
2.30 REF.
2.90 3.10
MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
PARAMETER
SYMBOL
Drain – Source Voltage
VDS
Gate – Source Voltage
VGS
Continuous Drain Current³, VGS@10V ^{TA = 25°C}
ID
TA = 70°C
Pulsed Drain Current^1,2
IDM
Total Power Dissipation, TA = 25°C
PD
Maximum Junction – Ambient³
RθJA
Linear Derating Factor
Operating Junction & Storage Temperature Range
TJ, TSTG
RATING
60
±20
5.0
4.0
10
2.7
45
0.02
150, -55~150
UNIT
V
V
A
A
A
W
°C/W
W/°C
°C
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
PARAMETER
SYMBOL MIN TYP MAX UNIT
TEST CONDITION
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Forward Transconductance
BVDSS
60
-
-
VGS(TH)
0.5
-
1.5
gFS
-
12
-
V
VGS=0V, ID =250µA
V
VDS= VGS, ID =250µA
S
VDS=15V, ID=4A
Gate-Source Leakage Current
IGSS
-
-
±100
nA VGS=±20V
Drain-Source Leakage TA = 25°C
Current
TA = 70°C
IDSS
-
-
1
µA
V DS=60V, VGS=0V
-
-
10
VDS=60V, VGS=0V
Drain-Source On Resistance
Total Gate Charge²
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time²
Rise Time
Turn-off Delay Time
Fall Time
-
RDS(ON)
-
-
115
mΩ
VGS=10V, ID=5A
-
125
VGS=4.5V, ID=4.5A
Qg
-
4.0
-
V GS=4.5V
Qgs
-
1.2
-
nC VDS=30V
Qgd
-
1.0
-
I D=4A
Td(ON)
-
6
-
VDD=30V
Tr
-
12
-
nS
V GS=10V
Td(OFF)
-
18
-
I D=2.5A
Tf
-
10
-
RG=6Ω, RL=12Ω
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
-
320
-
-
42
-
-
20
-
VDS=30V
pF VGS=0V
f=1MHz
Forward On Voltage²
SOURCE-DRAIN DIODE CHARACTERISTICS
VSD
-
-
1.2
V
VGS=0V, I S=2.5A
Note: 1. Pulse width limited by Maximum junction temperature. 2. Pulse width≦300µS, Duty cycle≦2%
3. Surface mounted on 1 in² copper pad of FR4 board; 120°C/W when mounted on m in, copper pad.
29-Jan-2010 Rev. A
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