SSM9973 Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode Power Mos.FET

Elektronische Bauelemente
SSM9973
3.9A, 60V,RDS(ON) 80m
N-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
Description
The MMS9973 Provide the designer with the best Combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The SOT-223 Package is universally preferred for all commercial-industrial surface
mount applications and suited for low voltage application such as DC/DC conerters.
S OT-223
f


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GDS
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5
5

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Features
* Simple Drive Requirement
* Low Gate Charge
D
G
S
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS@10V
Continuous Drain Current, VGS@10V
Pulsed Drain Current ¹
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID@TA=25 ^oC
ID@TA=70 ^oC
IDM
PD@TA=25 ^oC
Tj, Tstg
Ratings
60
±20
3.9
2.5
20
2.7
0.02
-55~+150
Unit
V
V
A
A
A
W
W / ^oC
o_C
Thermal Data
Parameter
Thermal Resistance Junction-ambient ³
Symbol
Rthj-a
Ratings
45
Unit
o_C/W
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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