English
Language : 

SSM9573 Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – P-Channel Enhancement Mode Power MOSFET
Elektronische Bauelemente
SSM9573
-2.7A , -60V , RDS(ON) 175mΩ
P-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SSM9573 provide the designer with the best
combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness. The SOT-223 package
is universally preferred for all commercial-industrial surface
mount applications and suited for low voltage applications
such as DC/DC converters.
FEATURES
Lower Gate Charge
Simple Drive Requirement
Fast Switching Characteristic
SOT-223
A
M
4
Top View C B
K
L
E
1
2
3
D
F
GH
J
MARKING
9573
= Date code
PACKAGE INFORMATION
Package
MPQ
SOT-223
2.5K
Leader Size
13 inch
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
5.90 6.70
6.70 7.30
3.30 3.80
1.42 1.90
4.45 4.75
0.60 0.85
REF.
G
H
J
K
L
M
Millimeter
Min. Max.
-
0.18
2.00 REF.
0.20 0.40
1.10 REF.
2.30 REF.
2.80 3.20
2
Drain
1
Gate
3
Source
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Rating
Drain-Source Voltage
VDS
-60
Gate-Source Voltage
VGS
±20
Continuous Drain Current 1@VGS=10V TA=25°C
TA=70°C
Pulsed Drain Current 2
Power Dissipation 3
TA=25°C
Operating Junction & Storage Temperature
ID
IDM
PD
TJ, TSTG
-2.7
-2
-5
1.5
-55~150
Thermal Resistance Rating
Thermal Resistance Junction-Ambient1(Max).
RθJA
85
Thermal Resistance Junction-Case1(Max).
RθJC
60
Unit
V
V
A
A
A
W
°C
°C / W
°C / W
http://www.SeCoSGmbH.com/
11-Aug-2014 Rev.A
Any changes of specification will not be informed individually.
Page 1 of 4